Smaller - Stronger - Faster
Welcome To The Power Story
Shaping the Future
Powering-Up the Future
High Power Performers
Power Lab Germany
Key Features
Investments in SiC
Stable Supply
Milestones
Opportunities and Challenges
Our Aim
Against the backdrop of global warming
endangering future generations, the demand
for energy-efficient devices increases.
The use of SiC technology leads to
considerable energy savings
and CO2 reduction.
Renewable Energies and Energy Conversion: Preserving the Environment
Electrical Vehicles and ...
... Transportation: On the Move and Eco-Friendly
E-Infrastructure: Powering-up Efficiently
Factory Automation: Enabling Industry 4.0
Data Centers: Empowering Green Computing
SiC Wafer
SiC 3-pin MOSFET: TO-3PFM
D2PAK: TO-263AB
SiC 7-pin MOSFET: TO-263-7L
SiC 4-pin MOSFET: TO-247-4L
Compared to the previous generation, ROHM’s 4th generation SiC MOSFETs achieves up to 50% lower switching loss and 40 % reduction of ON resistance without sacrificing short-circuit ruggedness. On top, the latest generation offers a more flexible gate voltage range (15 -18V) and supports turn-off with zero volt – enabling simple gate drive circuits with unipolar supply to be used.
