600V SJ-MOSFET：R60xxJNx Series : PrestoMOS™ Boosts Design Freedom While Affording Industry-Fastest Reverse Recovery Time

The PrestoMOS^™ series of superjunction MOSFETs, developed independently by ROHM, use original ROHM lifetime control technology to achieve an industry-fastest* reverse recovery time (trr). These MOSFETs contribute to reducing power consumption during steady-state operation in air conditioners and inverter applications, and so are already highly evaluated as replacements for IGBTs. *According to a ROHM survey, as of March 15, 2019

The preexisting lineup has recently been expanded with the addition of 30 newly developed models, the R60xxJNx series, with the following features.

• ・The fastest reverse recovery time (trr) in the industry. Power dissipation under light loading are reduced by approx. 58% compared with IGBTs.
• ・A design that eliminates self-turn on, which is one cause of increased losses.
• ・Optimization of body diode characteristics, improved soft recovery index. Reduction of noise that may cause erroneous operation.

As a result of these features, application losses can be reduced, circuit optimization is simplified, and freedom of design is enhanced.

Industry-fastest Reverse Recovery Time (trr) Achieved; Power Dissipation Reduced Approx. 58% Under Light Loading Compared with IGBTs

Inverter circuits are used for motor driving in appliances such as air conditioners and refrigerators, and IGBTs have ordinarily been used as the switching elements. However, as part of demands in recent years for improved energy efficiency, reduction of power consumption during steady-state operation has become an issue. ROHM first placed its PrestoMOS^™ power MOSFETs featuring industry-fastest reverse recovery characteristics on the market in 2012; these devices have received enthusiastic praise for their performance in reducing power consumption during steady-state operation.

Design Free of Self-turn On Causing Loss Increases

By optimizing the parasitic capacitance that is present in a MOSFET due to its structure, the rise in gate voltage during switching can be reduced by 20%. In addition, a design is adopted in which the MOSFET turn-on threshold voltage (Vth) is raised by a factor of about 1.5, so that self-turn on does not easily occur. The gate resistance, which is one factor causing losses, is optimized to enable loss reduction.

Improved Recovery Characteristic for Reduced Noise Leading to Malfunctions

In general, the recovery characteristic of the body diode of an SJ-MOSFET is a hard recovery characteristic. Through optimization of their structure, the R60xxJNx series of MOSFETs feature a 30% improvement in the soft recovery index over previous devices as well as reduced noise while maintaining the industry’s fastest reverse recovery time (trr). As a result, noise optimization utilizing the gate resistance and other means during design time is facilitated.

The R60xxJNx series lineup is described below.

Package
		TO-252 (DPAK) [SC-63]	TO-263 (LPT(S) D2PAK) [SC-83]	TO-220FM	TO-247
Ron typ (mΩ)	1100	R6004JND3	R6004JNJ	R6004JNX
	720	R6006JND3	R6006JNJ	☆R6006JNX
	600	R6007JND3	R6007JNJ	R6007JNX
	450	R6009JND3	R6009JNJ	R6009JNX
	350		R6012JNJ	☆R6012JNX
	220		R6018JNJ	R6018JNX
	180		R6020JNJ	R6020JNX	R6020JNZ4
	140			R6025JNX	R6025JNZ4
	110			☆R6030JNX	R6030JNZ4
	90				R6042JNZ4
	64				☆R6050JNZ4
	45				☆R6070JNZ4

☆In development