Full-SiC Power Modules：Continually Expanding Lineup1200 V, 400/600 A Versions Added, With Even Lower Losses and Smaller Sizes

In March 2012, ROHM began mass production of the world’s first full-SiC power module, with SiC used for all internal power semiconductor devices. Thereafter, the product lineup was extended to 1200 V, 300 A products, and the SiC power modules are being used in a wide range of fields. Through the development of a new package, the lineup of full-SiC power modules is extended to cover current ratings from 100 A to 600 A, which are the principal specifications of products in the IGBT module market. These power modules make possible dramatic increases in efficiency and reductions in size compared with general IGBT module applications with equivalent current ratings.

Improved Efficiency in High-Power Applications through Greatly Reduced Switching Losses

Through development of a new package incorporating an unique internal structure and optimizing the heat dissipation design, full-SiC power modules rated at 600 A were commercialized. As a result, it became possible to study to use full-SiC power modules in higher power applications such as large-capacity power supplies for industrial equipment. Compared with general IGBT modules with equivalent current ratings, the switching losses at Tj=150°C were reduced by 64%. (based on comparison of product data sheets of IGBT modules available on the market)