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Product Key Points

"Full SiC" Power Modules Using ROHM's Own SiC-MOSFET and SiC-SBD

Third-Generation SiCMOSFET Adopted, Expanding Lineup

Keyword
  • Full SiC power module
  • Third-generation SiC-MOSFET
  • SiC-SBD
  • Switching loss
  • More efficient
  • More compact
  • Lineup

ROHM has, for the first time in the world, begun mass production of a "full SiC" power module that uses SiC-MOSFETs and SiC-SBDs manufactured by the company itself. Faster switching and greatly reduced losses are possible compared with conventional Si-IGBT power modules. The latest modules adopt third-generation SiC-MOSFETs, to achieve still lower losses.

Third-Generation SiC-MOSFETs Adopted to Further Reduce Losses

SiC-MOSFETs used in full SiC power modules continue to evolve, and third-generation elements, adopting a trench structure, have been released as next-generation elements. In conjunction with this an SiC module version that uses the third-generation SiC-MOSFETs has also been developed.

The SM180D12P3C007 is a full SiC power module incorporating SiC-SBD, employing third-generation SiC-MOSFETs to achieve lower on-resistance and larger currents, and is rated at 1200 V/180 A, with a Ron of 10 mΩ (typ). Below, the relation of this device to existing products is indicated.

3G

The BSM180D12P3C007 reduces switching losses far below those of an IGBT module; losses are some 42% lower than existing SiC modules. As a result, still more efficient and compactapplication products can be expected.

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Expanded Lineup of Full SiC Power Modules

The following table describes the current lineup of SiC power modules. In addition to the BSM180D12P3C007 described here, new products have been added to the lineup of products using second-generation SiC-MOSFETs. Hereafter the lineup will be further expanded.

Part No. Absolute Maximum Ratings
(Tj=25°C)
RDS
(ON)
(mΩ)
Package Thermistor Internal Circuit Diagram
VDS
(V)
ID
(A)
(Tc=
60°C)
Tj
(°C)
Tstg
(°C)
Visol
(V)
(AC1min.)
NEW
BSM080D12P2C008
(2G. DMOS)
1200 80 -40 to
+175
-40 to
+125
2500 34 C
type
Not provided 161115_img_01
BSM120D12P2C005
(2G. DMOS)
120 20
NEW
BSM180D12P3C007
(3G.UMOS)
180 10
NEW
BSM120C12P2C201
(2G.DMOS)
120 20 161115_img_02
NEW
BSM180D12P2E002
(2G.DMOS)
180 10 E
type
Provided 161115_img_03
BSM300D12P2E001
(2G. DMOS)
300 7.3

"Full SiC" Power Modules Using ROHM's Own SiC-MOSFET and SiC-SBD

Power Supply Design Technical Materials Free Download

Power Supply Design Technical Materials Free Download

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