Silicon Diodes Continue to Evolve, Driven by Applications | Si Fast-Recovery Diodes : Emphasis on Efficiency and Rated Voltage/Leakage Current

ROHM manufactures various silicon-base diodes. Among these, we here introduce diodes with characteristics and specifications suited to power applications. Many of the diodes used in power applications are employed for rectification. For example, in power supply circuits, Schottky barrier diodes and fast-recovery diodes are used for output rectification. The kind of diode to use is determined based on such parameters as the rated voltage and current, VF, IR, trr, and the like, but in recent years, Si-based power diodes have undergone improvements making them suited to numerous applications. Silicon-based diodes have been developed with previous drawbacks alleviated, thus reducing the need for trade-offs.

Schottky barrier diodes (SBDs) are diodes that use a Schottky barrier, which appears at the junction of a metal and a semiconductor, as opposed to the PN junction structure of ordinary diodes. Compared with PN junction diodes, SBDs typically feature a low forward voltage (VF) and fast switching. However, they are hobbled by a large reverse leakage current (IR), and their rated voltages are below 200 V, which is not very high compared with other Si diodes.

ROHM’s SBD lineup includes series that feature ultra-high VF values to improve efficiency, and ultra-low IR series with the IR held to micro-ampere order while maintaining a high withstand voltage. The following graphic maps these SBD series and their relations to applications, taking IR along the vertical and VF along the horizontal axis.

Details info on the devices of the above series can be accessed from the following links.

A list of the entire lineup of ROHM SBDs can be found here.

• Schottky barrier diode
• Fast recovery diode
• SiC-SBD