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Product Information

You can easily find the best power supply IC, Si/SiC MOSFETs and diodes, and other related products using the product lineup tree and features.

SiC Schottky Barrier Diodes

SiC is a next generation low-loss semiconductor to reduce switching losses and to have better performance under high temperature condition, realizing smaller, lower power and higher efficiency power devices than Si. SiC Schottky barrier diodes can reduce switching losses and perform fast switching with actual results in PFC of high speed switching power supply circuits.

650V
Part No. IF(A) PD(W) Package AEC-Q101
SCS206AG 6 51 TO-220AC2L
SCS206AGHR 6 51 TO-220AC
SCS206AJ 6 48 TO-263AB (LPTL)
SCS206AM 6 31 TO-220FM2L
SCS208AG 8 68 TO-220AC2L
SCS208AGHR 8 68 TO-220AC
SCS208AJ 8 62 TO-263AB (LPTL)
SCS208AM 8 34 TO-220FM2L
SCS210AG 10 78 TO-220AC2L
SCS210AGHR 10 78 TO-220AC
SCS210AJ 10 83 TO-263AB (LPTL)
SCS210AM 10 34 TO-220FM2L
SCS212AG 12 93 TO-220AC2L
SCS212AGHR 12 93 TO-220AC2L
SCS212AJ 12 88 TO-263AB (LPTL)
SCS212AM 12 37 TO-220FM2L
SCS215AE 15 110 TO-247
SCS215AG 15 110 TO-220AC2L
SCS215AGHR 15 110 TO-220AC
SCS215AJ 15 100 TO-263AB (LPTL)
SCS215AM 15 39 TO-220FM2L
SCS220AE 20 130 TO-247
SCS220AE2 20 160 TO-247
SCS220AE2HR 20 160 TO-247
SCS220AG 20 130 TO-220AC2L
SCS220AGHR 20 130 TO-220AC
SCS220AJ 20 100 TO-263AB (LPTL)
SCS220AM 20 40 TO-220FM2L
SCS230AE2 30 230 TO-247
SCS230AE2HR 30 230 TO-247
SCS240AE2 40 270 TO-247
SCS240AE2HR 40 270 TO-247
S6204 8 Bare Die
S6202 10 Bare Die
S6207 15 Bare Die
S6203 20 Bare Die
1200V
Part No. IF(A) PD(W) Package AEC-Q101
SCS205KG 5 88 TO-220AC2L
SCS205KGHR 5 88 TO-220AC
SCS210KE2 10 170 TO-247
SCS210KE2HR 10 170 TO-247
SCS210KG 10 150 TO-220AC2L
SCS210KGHR 10 150 TO-220AC
SCS215KG 15 180 TO-220AC2L
SCS215KGHR 15 180 TO-220AC
SCS220KE2 20 280 TO-247
SCS220KE2HR 20 280 TO-247
SCS220KG 20 210 TO-220AC2L
SCS220KGHR 20 210 TO-220AC
SCS230KE2 30 360 TO-247
SCS240KE2 40 420 TO-247
1700V
1700V P/N 10A 17A 25A 50A
Bare chip S64xx…x under development under development under development under development

SiC MOSFET

SiC is a next generation low-loss semiconductor to reduce switching losses and to have better performance under high temperature condition, realizing smaller, lower power and higher efficiency power devices than Si. SiC MOSFETs can reduce switching losses by fast switching due to theoretically no tail-current at switching operation.

BVDSS P/N Package RDSon ID max SBD
400V SCTMU001F TO220AB 120mΩ 20A -
650V SCT2120AF TO220AB 120mΩ 29A -
1200V SCT2080KE TO247 80mΩ 40A -
1200V SCH2080KE TO247 80mΩ 40A co-packed
1200V SCT2160KE TO247 160mΩ 22A -
1200V SCT2280KE TO247 280mΩ 14A -
1200V SCT2450KE TO247 450mΩ 10A -
1700V SCT2H12NZ TO3PFM 1.15Ω 3.7A -

SiC Power Modules

SiC is a next generation low-loss semiconductor to reduce switching losses and to have better performance under high temperature condition, realizing smaller, lower power and higher efficiency power devices than Si. SiC Power Modules can drastically reduce power losses for IGBT modules because of lower switching losses, and excel under high switching frequency condition.

BVDSS ID max P/N Package Internal circuit
Diagram MOS SBD NTC
1200V 80A BSM080D12P2C008 C type
1200V 120A BSM120D12P2C005
1200V 180A BSM180D12P2C101
1200V 180A BSM180D12P3C007
1200V 300A BSM300D12P2E001 E type

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