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Product Information

You can easily find the best power supply IC, Si/SiC MOSFETs and diodes, and other related products using the product lineup tree and features.

Si Schottky Barrier Diodes

Si Fast Recovery Diodes

Si MOSFET

Si Schottky Barrier Diodes

Ultra-low VF

RBxx1 Series
- RB161MM-20 - RB051MM-2Y - RB051L-40

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RBE Series
- RBE05AS20A - RBE05SM20A - RBE2VAM20A

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Low VF

RBxx5 Series
- RB055L-30 - RB055L-40 - RB055L-60

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RBxx0 Series
- RB160VAM-40 - RB160MM-40 - RB160L-40

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RBR Series
- RBR3MM40A - RBR5L40A - RBR20BM40A

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Low IR

RBQ Series
- RBQ20BM45A - RBQ30NS45A - RBQ30T45A

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RBxx7 Series (NEW Low IR)
- RB087BM-40 - RB227NS-60 - RB227T100

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Ultra-low IR

RBxx8 Series
- RB088BM-40 - RB238NS-40 - RB238T-40

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Si Fast Recovery Diodes

Ultra-low VF

RFNL Series
- RFNL5BM6S - RFNL10TJ6S - RFNL20TJ6S

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General-purpose Standard Type

RFN Series
- RFN20TJ6S - RFN30TS6S - RFN60TS6D

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Fast trr

RFUH Series
- RFUH20TJ6S - RFUH30TS6D - RFUH60TS6D

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RFV Series
- RFV8TJ6S - RFV15TJ6S - RFV15TG6S

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Si MOSFET

Standard SJ MOSFET: AN Series

Dramatically reduction of Ron and Qg for planar MOSFETs.

R50xxANxシリーズ(500V)
Part No. Package VDSS[V] ID[A] RDS(on)[Ω]
at 10V Typ.
R5021ANX TO220FM 500 21 0.16
R5019ANX 19 0.18
R5016ANX 16 0.21
R5013ANX 13 0.29
R5011ANX 11 0.38
R5009ANX 9 0.55
R5007ANX 7 0.75
R5005CNX 6 0.9
R5021ANJ LPTS 21 0.16
R5016ANJ 16 0.21
R5013ANJ 13 0.29
R5011ANJ 11 0.38
R5009ANJ 9 0.55
R5007ANJ 7 0.78
R5005CNJ 5 1.2
SP8K80 SOP8 (Dual) 0.5 9

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R50xxANxシリーズ(520V)
Part No. Package VDSS[V] ID[A] RDS(on)[Ω]
at 10V Typ.
R5207AND CPT3 525 7 0.78
R5205CND 5 1.2

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R60xxANxシリーズ(600V)
Part No. Package VDSS[V] ID[A] RDS(on)[Ω]
at 10V Typ.
R6046ANZ TO247 600 46 0.069
R6046ANZ TO3PF 46 0.065
R6025ANZ 25 0.12
R6020ANZ 20 0.17
R6015ANZ 15 0.23
R6020ANX TO220FM 20 0.17
R6015ANX 15 0.23
R6012ANX 12 0.32
R6010ANX 10 0.43
R6008ANX 8 0.6
R6006ANX 6 0.85
R6020ANJ LPTS 20 0.19
R6015ANJ 15 0.23
R6012ANJ 12 0.32
R6010ANJ 10 0.43
R6008ANJ 8 0.6
R6006AND CPT3 6 0.9
R6004CND 4 1.4

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R80xxANxシリーズ(800V)
Part No. PKG VDSS (V) ID (A) RDS(on) Typ.(Ω)
Vgs=10V
Qg
Typ.(nC) 
Vgs=10V
R8001CND CPT3
D-pack
800 1 6.7 7.2
R8002CND 2 3.3 12.7
R8005AND3 TO252
D-pack
800 5 1.6 21
R8007AND3 7 1.05 28
R8002ANJ LPT
D2-pack
800 2 3.3 12.7
R8005ANJ 5 1.6 21
R8008ANJ 8 0.79 39
R8002ANX TO220FM 800 2 3.3 12.7
R8005ANX 5 1.6 21
R8008ANX 8 0.79 39
R8010ANX 10 0.43 62
R8012ANZ1 TO247 800 12 0.35 78
R8016ANZ1 16 0.23 115

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Low Noise SJ MOSFET: EN Series

Noise Improved version of standard low Ron and fast switching SJ MOSFETs with larger noises due to its high speed.
- Combined the low Ron feature of SJ MOSFETs with the low noise feature of planar MOSFET.
- Low Ron replacement of planar MOSFETs.

R60xxENxシリーズ(600V)
PKG Part No. VDSS(V) ID(A) RDS(on) (Ω) Vgs=10V Qg (nC)
Vgs=10V
Typ.
Typ. MAX
CPT
3D-pak
R6002END 600 1.7 2.8 3.4 6.5
R6004END 4 0.9 0.98 15
TO252E
D-pak
R6007END3 600 7 0.57 0.62 20
R6009END3 9 0.5 0.535 23
R6011END3 11 0.34 0.39 32
LPT
D2-pak
R6004ENJ 600 4 0.9 0.98 15
R6007ENJ 7 0.57 0.62 20
R6009ENJ 9 0.5 0.535 23
R6011ENJ 11 0.34 0.39 32
R6015ENJ 15 0.26 0.29 40
R6020ENJ 20 0.17 0.196 60
R6024ENJ 24 0.15 0.165 70
TO220FM R6004ENX 600 4 0.9 0.98 15
R6007ENX 7 0.57 0.62 20
R6009ENX 9 0.5 0.535 23
R6011ENX 11 0.34 0.39 32
R6015ENX 15 0.26 0.29 40
R6020ENX 20 0.17 0.196 60
R6024ENX 24 0.15 0.165 70
R6030ENX 30 0.115 0.13 85
TO3PF R6015ENZ 600 15 0.26 0.29 40
R6020ENZ 20 0.17 0.196 60
R6024ENZ 24 0.15 0.165 70
R6030ENZ 30 0.115 0.13 85
R6035ENZ 35 0.095 0.102 110
TO247 R6020ENZ1 600 20 0.17 0.196 60
R6024ENZ1 24 0.15 0.165 70
R6030ENZ1 30 0.115 0.13 85
R6035ENZ1 35 0.095 0.102 110
R6047ENZ1 47 0.066 0.072 145
R6076ENZ1 76 0.038 0.042 260

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R65xxENxシリーズ(650V)
PKG Part No. VDSS(V) ID(A) RDS(on) (Ω) Vgs=10V Qg (nC)
Vgs=10V
Typ.
Typ. MAX
CPT3
D-pak
R6502END 650 1.7 3.1 3.57 6.5
R6504END 4 0.99 1.14 15
TO252E
D-pak
R6507END3 650 7 0.63 0.725 20
R6509END3 9 0.55 0.64 23
R6511END3 11 0.375 0.435 32
LPT
D2-pak
R6504ENJ 650 4 0.99 1.14 15
R6507ENJ 7 0.63 0.725 20
R6509ENJ 9 0.55 0.64 23
R6511ENJ 11 0.375 0.435 32
R6515ENJ 15 0.29 0.335 40
R6520ENJ 20 0.19 0.22 60
R6524ENJ 24 0.165 0.19 70
TO220FM R6504ENX 650 4 0.99 1.14 15
R6507ENX 7 0.63 0.725 20
R6509ENX 9 0.55 0.64 23
R6511ENX 11 0.375 0.435 32
R6515ENX 15 0.29 0.335 40
R6520ENX 20 0.19 0.22 60
R6524ENX 24 0.165 0.19 70
R6530ENX 30 0.13 0.15 85
TO3PF R6515ENZ 650 15 0.29 0.335 40
R6520ENZ 20 0.19 0.22 60
R6524ENZ 24 0.165 0.19 70
R6530ENZ 30 0.13 0.15 85
R6535ENZ 35 0.102 0.118 110
TO247 R6520ENZ1 650 20 0.19 0.22 60
R6524ENZ1 24 0.165 0.19 70
R6530ENZ1 30 0.13 0.15 85
R6535ENZ1 35 0.102 0.118 110
R6547ENZ1 47 0.073 0.084 145
R6576ENZ1 76 0.042 0.049 260

High Speed SJ MOSFET: KN Series

Developed for a demand for fast switching capability, maintaining a low noise feature.
- Featuring fast switching and low Ron characteristics.
- Improved switching speed to reduce Rg and Qgd.
- High efficiency to reduce switching losses.

R60xxKNシリーズ(600V)
PKG Part No. VDSS(V) ID(A) RDS(on) (Ω) Vgs=10V Qg (nC)
Vgs=10V
Typ.
Typ. MAX
CPT3
D-pak
R6002KND 600 1.7 2.8 3.4 4.5
R6004KND 4 0.9 0.98 10
TO252E
D-pak
R6007KND3 600 7 0.57 0.62 14
R6009KND3 9 0.5 0.535 16
R6011KND3 11 0.34 0.39 22
LPT
D2-pak
R6004KNJ 600 4 0.9 0.98 10
R6007KNJ 7 0.57 0.62 14
R6009KNJ 9 0.5 0.535 16
R6011KNJ 11 0.34 0.39 22
R6015KNJ 15 0.26 0.29 27
R6020KNJ 20 0.17 0.196 40
R6024KNJ 24 0.15 0.165 47
TO220FM R6004KNX 600 4 0.9 0.98 10
R6007KNX 7 0.57 0.62 14
R6009KNX 9 0.5 0.535 16
R6011KNX 11 0.34 0.39 22
R6015KNX 15 0.26 0.29 27
R6020KNX 20 0.17 0.196 39
R6024KNX 24 0.15 0.165 47
R6030KNX 30 0.115 0.13 57
TO3PF R6015KNZ 600 15 0.26 0.29 27
R6020KNZ 20 0.17 0.196 40
R6024KNZ 24 0.15 0.165 47
R6030KNZ 30 0.115 0.13 57
R6035KNZ 35 0.095 0.102 74
TO247 R6020KNZ1 600 20 0.17 0.196 40
R6024KNZ1 24 0.15 0.165 47
R6030KNZ1 30 0.115 0.13 57
R6035KNZ1 35 0.095 0.102 74
R6047KNZ1 47 0.066 0.072 97
R6076KNZ1 76 0.038 0.042 174

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Presto MOS/Fast trr SJ MOSFET: FN Series

Developed for a demand for reducing external components to eliminate external diodes and improving efficiency of diodes, because MOSFET or IGBT will require external diodes in inverter circuits.
- Improved trr characteristics of parasitic diode.

R50xxFNxシリーズ(500V)
PKG Part No. VDSS(V) ID(A) RDS(on)
Typ.(Ω)
Vgs=10V
Qg
Typ.(nC)
Vgs=10V
trr Typ.
(ns)
TO220FM R5009FNX 500 9 0.65 18 78
R5011FNX 11 0.4 30 85
R5016FNX 16 0.22 45 100

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R60xxFNxシリーズ(600V)
PKG Part No. VDSS(V) ID(A) RDS(on)
Typ.(Ω)
Vgs=10V
Qg
Typ.(nC)
Vgs=10V
trr Typ.
(ns)
LPT
D2-pack
R6008FNJ 600 8 0.73 20 67
R6012FNJ 12 0.39 35 75
TO220FM R6008FNX 600 8 0.73 20 67
R6012FNX 12 0.39 35 75
R6015FNX 15 0.27 42 90
R6020FNX 20 0.2 65 105
TO3PF R6025FNZ 600 25 0.14 85 120
R6046FNZ 46 0.075 150 145
TO247 R6025FNZ1 600 25 0.14 85 120
R6046FNZ1 46 0.075 150 143

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Presto MOS/Fast trr Low Ron SJ MOSFET: MN Series

Developed more to improve efficiency of inverter circuits.
- No need external FRDs.
- Small Qg.
- Possible to improve efficiency of inverters.
- Improved trr characteristics of parasitic diode.

R60xxMNxシリーズ(600V)
PKG Part No. VDSS(V) ID(A) RDS(on)
Typ.(Ω)
Vgs=10V
Qg
Typ.(nC)
Vgs=10V
trr Typ.
(ns)
TO252
D-pack
R6007MND3 600 7 0.54 10 65
R6010MND3 10 0.27 20 70
TO220FM R6030MNX 600 30 0.11 45 92
TO3PF R6047MNZ 600 47 0.07 75 105
TO247 R6047MNZ1 600 47 0.07 75 105
R6076MNZ1 76 0.04 120 135

High Power Fast Switching Hybrid MOS: GN Series

Developed for a demand for a transistor to handle higher power maintaining MOSFET's switching speed, based on a rising need of power saving and high efficiency in market.

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