Key Words : ESD
2018.04.05
Reliability of SiC-MOSFETs
This time, we explain the reliability of SiC-MOSFETs. The information and data presented here is for...
- Key Words :
- Body diode conduction degradation
- Cosmic ray neutron-induced single-event effects
- CSS TDDB
- dV/dt breakdown
- ED-4701
- EIAJ
- Electrostatic discharge withstand capability
- ESD
- Gate oxide film
- High temperature gate bias
- HTGB
- IGBT
- JEITA
- QBD
- Reliability of SiC
- Reliability of SiC-MOSFET
- Short-circuit rating
- SiC reliability test
- SiC-MOSFET
- SiC-SBD
- Stability of gate threshold voltage
- Stacking fault
- Time dependent dielectric breakdown