SiC Power Device｜Basic
Support Tools： Full SiC Module Loss Simulator
2018.12.06
Points of this article
・A full-SiC module loss simulator and other support tools are available.
・The support tools are useful for selection and initial studies of full-SiC modules.
table of contents
In this article, we introduce support tools for design and evaluation using full-SiC modules.
Full-SiC Module Loss Simulator
A Loss simulator that can be used in the study and evaluation of full-SiC modules is offered at no cost. Simply by selecting a full-SiC module and setting the input conditions, the losses and temperatures of the transistors and diodes within the module can be simulated.
This is an example of an input screen.
G is the power factor, H is the modulation ratio, K is the heat sink temperature, and other quantities are as indicated. Next we show an output screen.
In A, the loss for each transistor in the module, P-Tr, the SW loss and DC loss making up each P-Tr loss, and the SW(on) and SW(off) losses that make up each SW loss are shown. At the same time, the difference between the junction temperature and the case temperature, ΔTj-c(Ave), and the junction temperature Tj(Ave) are also calculated. B similarly presents simulation results for diodes. C indicates the overall loss for the module. These results can be stored in CSV format.
The full-SiC module loss simulator can be downloaded here.
Other Support Tools
Other related support tools are available as well. For details, please follow these links.
【Download Documents】Basics of SiC Power Devices
This handbook explains the physical properties and advantages of SiC, the differences in characteristics and usage of SiC Schottky barrier diodes and SiC MOSFETs with a comparison to Si devices, and includes a description of full SiC modules with various advantages.
List of articles related to the「Support Tools： Full SiC Module Loss Simulator」
Download Technical Documents
Silicon Carbide Power Devices Understanding & Application Examples Utilizing the Merits
ROHM’s seminar materials provided at the seminar venue. Basic properties of silicon carbide(SiC) which has the potential for minimizing the size of power products, reducing power consumption, and enhancing efficiency, how to use SiC diodes and SiC MOSFETs, and application examples utilizing the merits are described.
SiC Power Device
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Basic
- What are SiC Schottky barrier diodes? ? Introduction
- What are SiC-MOSFETs? – SiC-MOSFET Features
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What are Full-SiC Power Modules?
- Switching Losses in Full-SiC Power Modules
- Tips for Practical Use: Gate Driving–Part 1
- Tips for Practical Use: Gate Driving–Part 2
- Tips for Practical Use: Snubber Capacitors
- Tips for Practical Use: The Effects of Specialized Gate Drivers and Snubber Modules
- Support Tools： Full SiC Module Loss Simulator
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Summary
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Introduction
- What is silicon carbide?
- Application
- Product Information
- FAQ