2018.12.06
Points of this article
・A full-SiC module loss simulator and other support tools are available.
・The support tools are useful for selection and initial studies of full-SiC modules.
In this article, we introduce support tools for design and evaluation using full-SiC modules.
A Loss simulator that can be used in the study and evaluation of full-SiC modules is offered at no cost. Simply by selecting a full-SiC module and setting the input conditions, the losses and temperatures of the transistors and diodes within the module can be simulated.
This is an example of an input screen.
G is the power factor, H is the modulation ratio, K is the heat sink temperature, and other quantities are as indicated. Next we show an output screen.
In A, the loss for each transistor in the module, P-Tr, the SW loss and DC loss making up each P-Tr loss, and the SW(on) and SW(off) losses that make up each SW loss are shown. At the same time, the difference between the junction temperature and the case temperature, ΔTj-c(Ave), and the junction temperature Tj(Ave) are also calculated. B similarly presents simulation results for diodes. C indicates the overall loss for the module. These results can be stored in CSV format.
The full-SiC module loss simulator can be downloaded here.
Other related support tools are available as well. For details, please follow these links.
ROHM’s seminar materials provided at the seminar venue. Basic properties of silicon carbide(SiC) which has the potential for minimizing the size of power products, reducing power consumption, and enhancing efficiency, how to use SiC diodes and SiC MOSFETs, and application examples utilizing the merits are described.
ROHM’s seminar materials provided at the seminar venue. Basic properties of silicon carbide(SiC) which has the potential for minimizing the size of power products, reducing power consumption, and enhancing efficiency, how to use SiC diodes and SiC MOSFETs, and application examples utilizing the merits are described.