SiC Power Device｜Basic
Trench-structure SiC-MOSFETs and Actual Products
2018.01.11
Points of this article
・ROHM has achieved mass production of SiC-MOSFETs that adopt an original double-trench structure.
・Trench-structure SiC-MOSFETs have an ON-resistance lower by about 50%, and an input capacitance lower by about 35%, compared with DMOS-structure products.
This time, we will explain the latest third-generation SiC-MOSFETs, and provide information relating to SiC-MOSFETs that can currently be obtained.
SiC-MOSFETs with an Original Double-Trench Structure
SiC-MOSFETs continue to evolve, and ROHM is now mass-producing SiC-MOSFETs that adopt the world’s first trench gate structure. These are ROHM’s third-generation SiC-MOSFETs.
Trench structures are widely used in Si-MOSFETs, and the use of trench structures in SiC-MOSFETs had attracted attention due to the effectiveness in lowering the ON- resistance.
However, in general single-trench structures, the electric field is concentrated at the bottom of the gate trench, and so long-term reliability has been an issue. But in the double-trench structure developed by ROHM, a trench structure is provided in the source area as well, so that electric field concentration at the bottom of the gate trench is alleviated and long-term reliability is secured, making possible mass production.
SiC-MOSFETs that adopt this double-trench structure have ON-resistances reduced by about 50%, and input capacitance reduced by about 35%, compared with second-generation planar-type (DMOS structure) SiC-MOSFETs already in mass production.
Actual SiC-MOSFET Products
Below is a list of SiC-MOSFETs that can be provided. These include the SCT series and the SCH series; the SCH series incorporate a SiC Schottky barrier diode, to address the reverse recovery characteristic of the body diode, for greatly improved characteristics.
In the list, those products with a SCT3xxx part number are third-generation trench-structure SiC MOSFETs.
【Download Documents】Basics of SiC Power Devices
This handbook explains the physical properties and advantages of SiC, the differences in characteristics and usage of SiC Schottky barrier diodes and SiC MOSFETs with a comparison to Si devices, and includes a description of full SiC modules with various advantages.
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ROHM’s seminar materials provided at the seminar venue. Basic properties of silicon carbide(SiC) which has the potential for minimizing the size of power products, reducing power consumption, and enhancing efficiency, how to use SiC diodes and SiC MOSFETs, and application examples utilizing the merits are described.
SiC Power Device
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Basic
- What are SiC Schottky barrier diodes? ? Introduction
- What are SiC-MOSFETs? – SiC-MOSFET Features
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What are Full-SiC Power Modules?
- Switching Losses in Full-SiC Power Modules
- Tips for Practical Use: Gate Driving–Part 1
- Tips for Practical Use: Gate Driving–Part 2
- Tips for Practical Use: Snubber Capacitors
- Tips for Practical Use: The Effects of Specialized Gate Drivers and Snubber Modules
- Support Tools： Full SiC Module Loss Simulator
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Summary
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Introduction
- What is silicon carbide?
- Application
- Product Information
- FAQ