SiC Power Device
Trench-structure SiC-MOSFETs and Actual Products
- Body diode
- Diode recovery loss
- Double-trench structure
- Internal diode
- MOSFET input capacitance
- Parasitic diode
- Recovery current
- Switching loss
- Trench-structure SiC-MOSFET
- Vd-Id characteristics
This time, we will explain the latest third-generation SiC-MOSFETs, and provide information relating to SiC-MOSFETs that can currently be obtained.
SiC-MOSFETs with an Original Double-Trench Structure
SiC-MOSFETs continue to evolve, and ROHM is now mass-producing SiC-MOSFETs that adopt the world's first trench gate structure. These are ROHM's third-generation SiC-MOSFETs.
Trench structures are widely used in Si-MOSFETs, and the use of trench structures in SiC-MOSFETs had attracted attention due to the effectiveness in lowering the ON- resistance.
However, in general single-trench structures, the electric field is concentrated at the bottom of the gate trench, and so long-term reliability has been an issue. But in the double-trench structure developed by ROHM, a trench structure is provided in the source area as well, so that electric field concentration at the bottom of the gate trench is alleviated and long-term reliability is secured, making possible mass production.
SiC-MOSFETs that adopt this double-trench structure have ON-resistances reduced by about 50%, and input capacitance reduced by about 35%, compared with second-generation planar-type (DMOS structure) SiC-MOSFETs already in mass production.
Actual SiC-MOSFET Products
Below is a list of SiC-MOSFETs that can be provided. These include the SCT series and the SCH series; the SCH series incorporate a SiC Schottky barrier diode, to address the reverse recovery characteristic of the body diode, for greatly improved characteristics.
In the list, those products with a SCT3xxx part number are third-generation trench-structure SiC MOSFETs.
・ROHM has achieved mass production of SiC-MOSFETs that adopt an original double-trench structure.
・Trench-structure SiC-MOSFETs have an ON-resistance lower by about 50%, and an input capacitance lower by about 35%, compared with DMOS-structure products.