Examination of Losses
Important Matters when Studying Large Output Currents Applications: Part 2
- DC/DC converter loss
- DCR loss
- Dead time loss
- Efficiency curve
- Efficiency graph
- Gate capacitance
- Gate charge
- Gate charge loss
- Inductor DCR
- Loss calculation
- Loss factors
- Loss in synchronous rectifying step-down converters
- Loss reduction
- MOSFET ON-resistance
- MOSFET Qg
- Power supply loss
- Switching loss
- Switching noise
- Switching speed
In the previous article, the first of two points to note when studying applications with large output currents was explained. The first point was that in order to increase the output current, MOSFETs with low on-resistance values are used, fast switching is employed, and inductors with low DCR are selected. In this article, the second point is explained.
Important Points When Studying Applications with Large Output Currents: Part 2
The following figure indicates the relationship between Qg and losses. As Qg increases, the gate charge loss increases monotonically.
As measures to address this loss increase, MOSFETs with the on-resistance necessary to increase the output current and which have a low Qg are studied. In actuality, there are MOSFETs with sufficiently low Qg values and that have low on-resistances, so this problem can be avoided.
As the point to note, there are cases in which switching rising/falling edges are sharp for MOSFETs with low Qg values, and so there is the possibility of increased switching noise. By making switching faster, there is the advantage of reduced switching loss, but EMI issues must be carefully considered, and corresponding consideration must be paid during board design.
Our discussion of points to note when studying applications with large output currents has spanned two articles, and so we here present a summary.
When studying an application with a large output current, MOSFETs with a low on-resistance should be used, switching speeds should be raised, and inductors with low DCR should be selected.
Where MOSFETs are considered, devices with low on-resistances and low Qg values are used. Here, there is a tendency for switching to be fast, and so the possibility of increased switching noise must be studied.
・When increasing the output current, MOSFETs with low on-resistance are selected, switching speeds are raised, and low-DCR inductors are used.
・High-voltage MOSFETs with low on-resistances tend to have higher Qg values, and so in order to avoid the increase in gate charge loss that accompanies a higher Qg, MOSFETs with low on-resistance and low Qg are selected.
・Low-Qg MOSFETs tend to have faster switching speeds, and so attention must be paid to increases in switching noise.