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HISTORY

Accelerating innovation in electric vehicles
through SiC power devices

2002 - 2010

2002.6
Began collaborative research with Kyoto University
2009.7
Global SiC wafer manufacturer SiCrystal joined the ROHM Group
2010.4
Established an integrated production system for SiC devices.
Began mass production of SiC SBDs
2010.12
World’s first to begin production of SiC MOSFETs

2012 - 2015

2012.3
World’s first to begin production of full SiC power modules comprised exclusively of SiC SBDs and MOSFETs
2015.6
World’s first to develop and produce trench-type SiC MOSFETs

2016 - 2017

2016.10
Became the official technology partner of VENTURI Formula E Team Provided SiC SBDs (Schottky barrier diodes) for Formula E inverters
2017.12
Provided full SiC power modules for Formula E inverters (Season 4)
  • 2002
  • 2009
  • 2010
  • 2011
  • 2012
  • 2013
  • 2014
  • 2015
  • 2016
  • 2017