3rd Generation SiC Schottky Barrier Diode：SCS3 Series : Enhanced the Surge Current Rating while Maintaining Low Losses, for PFC in High-End Equipment

ROHM’s SiC Schottky barrier diodes (hereafter “SiC-SBDs”) have advanced to the third generation with the recently announced “SCS3 series”. With each generation, ROHM’s SiC-SBDs have marked further improvements in various characteristics, chief among them lower forward voltages. The second-generation SiC-SBDs that are currently in volume production have achieved a forward voltage V_F of 1.35 V at 25°C. Moreover, the third-generation SCS3 series has further improved the V_F characteristic, while dramatically improving the surge current rating I_FSM.

With the Heightened Surge Current rating, Support for PFC in Servers, High-Performance PCs and the Like

It is already well known that SiC-SBDs have advantages for boosting the efficiency of power supplies and inverters due to their fast recovery characteristics, but in addition to this, the improved surge current rating is sought for PFC circuits in such applications as servers and high-end PCs. The SCS3 series has improved on the forward voltage characteristics of the second generation, and further improved the surge current rating by nearly twofold. As a result, the SCS3 series can be safely used even in applications that undergo irregular operation, such as when a surge current is applied.

Steadily Expanding Lineup

The initially announced product lineup, including devices still under development, consisted of three models rated from 6 A to 10 A, in TO-220ACP packages, but at present this is being expanded to 15 models, including models in development. In addition to the TO-220ACP packages using through-holes, there are plans to offer TO-220FM and surface-mount TO-263AB packages, so that our customers can select packages according to the mounting method and space constraints.